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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization

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Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing.

Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.
Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical and physico-chemical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

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R. K. Willardson, Eicke R. Weber, Constantinos Christofides, Gerard Ghibaudo

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D. D. Eley, P. W. Selwood, Paul B. Weisz

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Identification of Defects in Semiconductors

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

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R. K. Willardson, Eicke R. Weber, Michael Stavola

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This volume is comprised of reviews to inform the chemical engineering community about important developments in science and technology, and to serve as starting points for further advances. Included are chapters on chemical reactions of all sorts, combustion synthesis, fluid dynamics and the analysis and design of chemical reactors, and industrial cases in environmental engineering.

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John L. Anderson, Kenneth B. Bischoff, Morton M. Denn, John H. Seinfeld, George Stephanopoulos, James Wei

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Advances in Inorganic Chemistry presents timely and informative summaries of the current progress in a variety of subject areas within inorganic chemistry, ranging from bioinorganic to solid state. This acclaimed serial features reviews written by experts in the area and is an indispensable reference to advanced researchers. Each volume of Advances in Inorganic Chemistry contains an index, and each chapter is fully referenced.

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The first chapter in this volume, by E.S.H. El-Ashry, represents the second part of a trilogy on nucleosides he began in Volume 67. This chapter deals with diseco-nucleosides, or analogs of nucleosides in which thereare two bond disconnections. Other chapters deal with the importance of cyclic sulfates as intermediates in organic synthesis, methlypyridines and other methylazines as precursors to biand polyheterocycles, and the variety of heterocycles in nucleoside analogs in heteromonocyclic bases.

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors. Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley.
Volumes 54 and 55 reflect the industrially important recent developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and the availability of commercial pistoncylinder apparatus operating at high hydrostatic pressures. These much-needed books will be useful to both researchers and practitioners in applied physics, materials science, and engineering.

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R. K. Willardson, Eicke R. Weber, William Paul, Tadeusz Suski

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W. G. Frankenburg, V. I. Komarewsky, E. K. Rideal

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Intersubband Transitions in Quantum Wells: Physics and Device Applications

# data[].attributes.description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.<br>Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

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Eicke R. Weber, R. K. Willardson, H. C. Liu, Federico Capasso

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Germanium Silicon: Physics and Materials

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

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R. K. Willardson, Eicke R. Weber, John C. Bean, Robert Hull

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D. D. Eley, P. W. Selwood, Paul B. Weisz

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Nonlinear Optics in Semiconductor Physics I

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.<br>Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

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R. K. Willardson, Eicke R. Weber, Elsa Garmire, Alan Kost

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W. G. Frankenburg, V. I. Komarewsky, E. K. Rideal

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P. W. Selwood, Paul B. Weisz, D. D. Eley

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Uncooled Infrared Imaging Arrays and Systems

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This is the first book to describe an emerging but already growing technology of thermal imaging based on uncooled infrared imaging arrays and systems, which are the most exciting new developments in infrared technology today. This technology is of great importance to developers and users of thermal images for military and commercial applications. The chapters, prepared by world leaders in the technology, describe not only the mainstream efforts, but also exciting new approaches and fundamental limits applicable to all. Unified approach to technology development based on fundamental limits Individual chapters written by world leaders in each technology Novel potential approaches, allowing for the reduction of costs, described in detail Descriptive and analytical Provides details of the mainstream approaches--resistive bolometric, pyroelectric/field enhanced pyroelectric, thermoelectric Provides insight into a unified approach to development of all types of thermal imaging arrays Features state-of-the-art and selected new developments

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R. K. Willardson, Eicke R. Weber, David D. Skatrud, Paul W. Kruse

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D. D. Eley, W. G. Frankenburg, V. I. Komarewsky, Paul B. Weisz

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W. G. Frankenburg, V. I. Komarewsky, E. K. Rideal