# data[].attributes.description
'Introductory Dynamical Oceanography' 2nd ed provides an introduction to Dynamical Physical Oceanography at a level suitable for senior year undergraduate students in the sciences and for graduate students entering oceanography. It aims to present the basic objectives, procedures and successes and to state some of the present limitations of dynamical oceanography and its relations to descriptive physical oceanography. <br> The first edition has been thoroughly revised and updated and the new work includes reference to the Practical Salinity Scale 1978, the International Equation of State 1980 and the beta-spiral technique for calculating absolute currents from the density distribution. In addition the description of mixed-layer models has been updated and the chapters on Waves and on Tides have been substantially revised and enlarged, with emphasis on internal waves in the Waves chapter. While the text is self-contained readers are recommended to acquaint themselves with the general aspects of descriptive (synoptic) oceanography in order to be aware of the character of the ocean which the dynamical oceanographer is attempting to explain by referring to Pickard and Emery's 'Descriptive Physical Oceanography' 4th edition.

# data[].attributes.description
Most of the subject matter of this book has previously been available only in the form of research papers and review articles. I have not attempted to refer to all the published papers.  The reader may find it advantageous to refer to the references listed.

# data[].attributes.description
This volume is mainly concerned with a systematic development of the theory of plasmas, the authority being firmly rooted in the pioneering work of Landau. Corresponding results are also given for partially ionized plasmas, relativistic plasmas, degenerate or non-ideal plasmas and solid state plasmas.

# data[].attributes.description
This book is the first of a multivolume series devoted to an exposition of functional analysis methods in modern mathematical physics. It describes the fundamental principles of functional analysis and is essentially self-contained, although there are occasional references to later volumes. We have included a few applications when we thought that they would provide motivation for the reader. Later volumes describe various advanced topics in functional analysis and give numerous applications in classical physics, modern physics, and partial differential equations.

# data[].attributes.description
Since its first volume in 1960, Advances in Computers has presented detailed coverage of innovations in hardware and software and in computer theory, design, and applications. It has also provided contributorswith a medium in which they can examine their subjects in greater depth and breadth than that allowed by standard journal articles. As a result, many articles have become standard references that continue to be of significant, lasting value despite the rapid growth taking place in the field.

# data[].attributes.description
This is an introductory undergraduate textbook in set theory. In mathematics these days, essentially everything is a set. Some knowledge of set theory is necessary part of the background everyone needs for further study of mathematics. It is also possible to study set theory for its own interest--it is a subject with intruiging results anout simple objects. This book starts with material that nobody can do without. There is no end to what can be learned of set theory, but here is a beginning.

# data[].attributes.subtitle
Recent Advances in Computational Quantum Chemistry

# data[].attributes.description
Advances in Quantum Chemistry publishes surveys of current developments in the rapidly developing field of quantum chemistry--a field that falls between the historically established areas of mathematics, physics,chemistry, and biology. With invited reviews written by leading international researchers, each presenting new results, this quality serial provides a single vehicle for following progress in this interdisciplinary area. "Volume 28 collects papers written in honor of Geerd H.F. Diercksen. Diercksen is a pioneer in the field of quantum mechanics whose research includes studies of the structure and stability of hydrogen-bonded and Van der Waals dimers and small clusters, thevibrational and rotational spectra of diatomic and triatomic molecules, on static electric properties in solutions and of molecules absorbed on surfaces. His results are essential in molecular and atomic physics, in astrophysics, and in biochemistry.

# data[].attributes.author
John R. Sabin, Michael C. Zerner, Per-Olov Lowdin, Jacek Karwowski, Mati Karelson

# data[].attributes.description
Solid State Physics, Volume 51 continues the serial's tradition of excellence by focusing on the optical and electronic properties and applications of semiconductors. All of the topics in this volume are at the cutting-edge of research in the semiconductor field and will be of great interest to the scientific community.

# data[].attributes.name
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

# data[].attributes.description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

# data[].attributes.author
R. K. Willardson, Eicke R. Weber, Constantinos Christofides, Gerard Ghibaudo